دیتاشیت PSMN3R9-60PSQ
مشخصات دیتاشیت
| نام دیتاشیت |
PSMN3R9-60PSQ
|
| حجم فایل |
68.921
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
13
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Nexperia PSMN3R9-60PSQ
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
263W
-
Total Gate Charge (Qg@Vgs):
103nC@10V
-
Input Capacitance (Ciss@Vds):
5600pF@25V
-
Continuous Drain Current (Id):
130A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@1mA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
3.9mΩ@25A,10V
-
Package:
SOT-78
-
Manufacturer:
Nexperia
